Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films
نویسندگان
چکیده
منابع مشابه
Venting temperature determines surface chemistry of magnetron sputtered TiN films
Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors including exposure to residual process gases following the growth and the venting temperature Tv, each affecting the surface chemistry, are addressed for the first time. I...
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Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
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M.K.M. ALI , K. IBRAHIM , OSAMA S HAMAD , M.H. EISA , M.G. FARAJ , and F. AZHARI 1 School of Physics, University Sains Malaysia, Penang 11800, Malaysia Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum 11113, Sudan School of Electrical and Electronic Engineering, University Sains Malaysia, Penang 11800, Malaysia E-mail: [email protected], kamarul@...
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Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10 mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been s...
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Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic fo...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3587174